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TSMC will not touch High-NA lithography until 2030. Intel has already run a million wafers on it
Hardware3 min read

TSMC will not touch High-NA lithography until 2030. Intel has already run a million wafers on it

TSMC finally put a date on the $400 million scanners, and it is two nodes away, because the argument that decides this is really about the size of a photomask.

In briefTSMC announced plans to use High-NA EUV from 2030 with 6x6-inch photomasks, a 6x12 pilot line in 2031, and 6x12 systems in advanced node production by 20331High-NA EUV achieves 8nm single-exposure resolution versus 13nm for Low-NA, and High-NA scanners cost around $400 million2TSMC has confirmed that A12 and A13, due in 2029, will continue to rely on conventional EUV, and A13 is an optical shrink of A14 adding about 6% transistor density3
Updated · Sep 11, 2026, 02:50 ETThis story was revised after publication. The sources block reflects the current version.
TSMC’s Fab 18 in Tainan, Taiwan
Photo: 4300streetcar (CC BY 4.0)

Intel has now run more wafers through High-NA lithography than the rest of the industry put together. TSMC has not run one.

Both companies are working on the same problem in opposite orders, and on the same Monday this week they each said so. TSMC will put High-NA EUV into high-volume manufacturing in 2030 on the conventional six-by-six-inch photomasks the industry already uses, with a pilot line for double-width masks the year after and those bigger systems in advanced-node production by 2033 at the earliest. Intel, on the same day, said it had passed one million wafers processed on its own High-NA scanners.

That second number is worth sitting with. In late February 2025 Intel's cumulative count was about thirty thousand. By April 2026 every High-NA scanner ASML had shipped anywhere had processed half a million wafers between them. Intel now beats the whole field by itself.

What High-NA buys, and what it charges

High-NA gets you 8 nm single-exposure resolution where today's Low-NA tools give 13 nm. What it costs you is the field.

A High-NA scanner is anamorphic. It magnifies four times in one direction and eight times in the other, so a standard mask covers about 26 by 16.5 mm on the wafer instead of the full 26 by 33 millimetres.

Anything larger has to be exposed twice and stitched together.

And stitching costs throughput. On ASML's top High-NA tool it falls from 175 wafers an hour to 125, and which is Intel's own figure and the honest one to quote back at Intel (nobody else publishes theirs). Call it 29 percent of the output of a $400 million machine, handed back at the door.

So TSMC waited, which for its customer list is not obviously wrong

TSMC has already said that both of the nodes due in 2029 stay on conventional EUV. The later one is an optical shrink of the node before it and adds roughly 6 percent transistor density, so whatever follows has to carry a real jump. That node, whatever it ends up being called, is the first plausible home for a High-NA layer.

Four years out. Two nodes away.

The argument nobody has reconciled is about glass

ASML's chief executive Christophe Fouquet describes the transition as a progression: "first using current 6-inch masks and then further supported by 12-inch masks, which enable greater scanner productivity."

Here is the part that does not add up. TSMC's plan has the big masks in advanced-node production by 2033 at the latest. ASML's own roadmap, reported the same day, has every High-NA scanner launched before and after 2033 designed around the small reticles and stitching. One of those two documents has to move.

Changing the mask is not a scanner upgrade. It means changing blanks, deposition, etch, inspection, metrology, cleaning, pellicles, mask writers and handling systems (and the scanners, which is the cheap part of that list).

TSMC bought packaging instead, and is winning that bet so far

Its answer to the reticle limit has never been lithography. CoWoS, SoIC, multi-die.

So read the agenda differently.

Take the OIP Forum it opens in Silicon Valley on 23 September. Nvidia on multiphysics timing signoff. Arm on cross-die timing analysis. MediaTek on power-network design at the architecture stage. Alchip on high-speed SerDes and photonic co-design. Not one lithography keynote (the packaging track, by contrast, runs to CoWoS, SoIC and co-packaged optics). If your dies are already chiplets, half a field costs you less.

The case against us is Samsung, which plans to bring High-NA into DRAM high-volume manufacturing by 2028 and therefore before TSMC touches it in logic at all. Memory dies are small and repetitive, roughly the shape stitching punishes least, so that may be a cheaper first step than it looks from outside. It still puts TSMC third in a queue it usually leads.

We would expect no High-NA production wafers out of TSMC before 2030 and its next high-performance node to stay on Low-NA exactly as stated. Do you think the mask standard changes by 2033? We would not bet on it, and Intel is the only company in the industry acting as though it will.

Sources

01
TSMC announced plans to use High-NA EUV from 2030 with 6x6-inch photomasks, a 6x12 pilot line in 2031, and 6x12 systems in advanced node production by 2033“TSMC plans to start using High-NA EUV lithography tools for high-volume manufacturing in 2030 using conventional 6×6-inch photomasks. The company then plans to build a pilot line that uses 6×12-inch photomasks in 2031 with the goal of…” — tomshardware.com · reported · Sep 10
02
High-NA EUV achieves 8nm single-exposure resolution versus 13nm for Low-NA, and High-NA scanners cost around $400 million“High-NA EUV lithography tools can achieve an 8nm single-exposure resolution, as opposed to a 13nm single-exposure resolution offered by today's Low-NA EUV litho systems. ... because the company's developers had a good idea how to keep…” — tomshardware.com · reported · Sep 10
03
TSMC has confirmed that A12 and A13, due in 2029, will continue to rely on conventional EUV, and A13 is an optical shrink of A14 adding about 6% transistor density“TSMC's latest strategy separates its roadmap into annual client-oriented nodes (N2, N2P, N2X, A14, A13) and roughly biennial high-performance nodes (A16 in 2027, then A12 in 2029). The company has already confirmed that A12 and A13, due…” — tomshardware.com · reported · Sep 10
Show all 12 sources
04
ASML CEO Christophe Fouquet's statement on the mask transition“"We expect the adoption of High NA EUV to increase progressively along the device scaling roadmap, first using current 6-inch masks and then further supported by 12-inch masks, which enable greater scanner productivity and allow the…” — tomshardware.com · reported · Sep 10
05
Intel announced it had processed more than one million 300-mm wafers on High-NA EUV scanners, up from about 30,000 in late February 2025“Intel announced on Monday that it had processed more than one million 300-mm wafers using its High-NA EUV scanners, less than two and a half years after its first tool was assembled. ... As of late February 2025, Intel processes around…” — tomshardware.com · reported · Sep 10
06
ASML said in April 2026 that all High-NA scanners shipped had together processed over 500,000 wafers“ASML announced this April that all of the High-NA EUV scanners shipped by then processed over 500,000 wafers which achieving over 80% availability, which means that Intel has now processed more wafers using High-NA tools than the rest of…” — tomshardware.com · reported · Sep 10
07
High-NA anamorphic optics reduce the exposure field to about 26x16.5mm with a 6-inch mask, and stitching cuts EXE:5200B throughput from 175 to 125 wafers per hour“0.55-NA EUV uses anamorphic 4X/8X magnification, so the same 6×6 mask can provide only approximately 26×16.5 mm on the wafer. As a result, large dies that fit within a conventional 26 × 33 mm EUV field must be exposed as two half-fields…” — tomshardware.com · reported · Sep 10
08
ASML's roadmap has all future High-NA scanners before and after 2033 designed around 6x6-inch reticles and stitching“While neither ASML nor Intel confirmed that existing or planned High-NA EUV scanners can be modified to handle larger masks, all of the future High-NA EUV scanners to be launched before and after 2033 are designed around 6×6-inch…” — tomshardware.com · reported · Sep 10
09
Moving to 6x12-inch photomasks would require changes across mask blanks, deposition, etch, inspection, metrology, cleaning, pellicles, mask writers and handling systems“Moving from 6×6-inch to 6×12-inch photomasks would require substantial changes across the existing mask ecosystem, including mask blanks and deposition, etching, inspection and metrology, cleaning, pellicles, mask writers, and mask…” — tomshardware.com · reported · Sep 10
10
TSMC's OIP Forum 2026 opens in Silicon Valley on September 23 and continues in Hsinchu on November 12, with Nvidia, Arm, MediaTek and Synopsys among the keynotes“TSMC’s OIP Forum 2026 kicks off in Silicon Valley on Sep. 23, followed by Hsinchu Nov. 12 focused on advanced manufacturing processes and advanced packaging (3D IC multi-die architectures, CoWoS, SoIC and Co-Packaged Optics (Silicon…” — x.com · primary · Sep 10
11
The OIP agenda has Nvidia on multiphysics timing signoff, Arm on cross-die timing analysis, MediaTek on architecture-stage power network design, and Alchip on 224G SerDes and COUPE photonic co-design“依新思公開議程,輝達將分享多物理場時序簽核,安謀聚焦跨晶粒時序分析,聯發科則談架構階段的電源網路設計。... 高速互連方面,世芯-KY將分享以224G SerDes支援AI資料中心擴展的設計方法;並涵蓋COUPE光子積體電路協同設計。” — ctee.com.tw · reported · Sep 10
12
Samsung plans to introduce High-NA EUV into DRAM high-volume manufacturing by 2028“Samsung also plans to introduce ASML’s High NA EUV lithography into future DRAM high-volume manufacturing for the first time in the industry by 2028” — x.com · primary · Sep 10
You’re 60% through. Stories like this one, Mon · Wed · Fri, with every claim sourced.